Comment on ‘Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate’

Comment on ‘Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate’

In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron–hole bilayer tunnel field-effect transistor with symmetrically arranged gates (Jeong et al 2015 Semicond. Sci. Technol. 30 035021). Delayed alignment of the first electron and hole energy...

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

Performance Analysis of Double Hetero-gate Tunnel Field Effect Transistor

A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...

Comparative Studies on Double -Doped Al0.3Ga0.7As/InxGa1−xAs/GaAs Symmetrically Graded Doped-Channel Field-Effect Transistors

This work provides comparative studies of a double -doped Al0.3Ga0.7As/InxGa1−xAs/GaAs symmetrically graded x = 0.15 → 0.2 → 0.15 doped-channel field-effect transistor DD-DCFET with respect to a conventional double -doped pseudomorphic high electron mobility transistor pHEMT and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition...

Germanium-Source Tunnel Field Effect Transistors for Ultra-Low Power Digital Logic

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